About Jianbai Xia’s work
Based at the Chinese Academy of Sciences, Jianbai Xia held a Croucher Visitorship at Hong Kong Baptist University from December 1993 to February 1994.
Biography
Jianbai Xia received his bachelor’s degree in physics from Peking University in 1962, and master’s degree in 1965, served as an Assistant Researcher at the Institute of Semiconductors of the Chinese Academy of Sciences from 1978 to 1986, a researcher at the Institute of Semiconductors of the Chinese Academy of Sciences since 1986, and was elected as a member of the Chinese Academy of Sciences in 2001. Xia studies the quantum theory and application research of electronic states of low-dimensional semiconductor microstructures.
Xia has conducted systematic research on the quantum theory and application of electronic states of low-dimensional semiconductor microstructures. The tensor model of the hole states of the quantum sphere is proposed, the eigenstates of the heavy and light hole mixture are obtained, and the correct optical transition selection rule is given. A finite plane wave expansion method for calculating the electronic state of the superlattice is proposed. The hole tunneling theory of semiconductor double-barrier structure was proposed, and a multi-channel transmission matrix method was developed.